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| FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET January 2007 FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET 30V,11.5A, 10.5m Features Max rDS(on) = 10.5m at VGS = 10V, ID = 11.5A Max rDS(on) = 15m at VGS = 4.5V, ID = 10A Low Qg, Qgd and Rg for efficient switching performance RoHS Compliant tm General Description This single N-channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control switch or "low side" synchronous rectifier. Application Point of Load Converter 1/16 Brick Synchronous Rectifier Bottom Top 5 6 7 8 D 1 D D D D D D 5 6 7 8 4G 3S 2S 1S 4 3 2 S S S G D Power 33 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) (Note 1a) Ratings 30 20 11.5 40 2.1 0.9 -55 to +150 Units V V A W C Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1) (Note 1a) 3.0 60 C/W Package Marking and Ordering Information Device Marking 6296 Device FDM6296 Package Power 33 Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDM6296 Rev.E 1 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V 30 29 1 100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 11.5A VGS = 4.5V, ID = 10A VGS = 10V, ID = 11.5A , TJ = 125C VDS = 5V, ID = 11.5A 1 1.9 -5 8.7 10.6 13 47 10.5 15 17 S m 3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz VDS = 15mV, f = 1MHz 1507 415 128 1.1 2005 555 170 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 5V Gate to Source Gate Charge Gate to Drain "Miller" Charge VGS = 5V VDD = 15V ID = 11.5A VDD = 15V, ID = 1.0A VGS = 10V, RGEN = 6 10 5 27 13 12 4 3 20 10 44 23 17 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2A (Note 2) 0.9 29 20 1.2 V ns nC IF = 11.5A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a)RJA = 60C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5'x1.5'x0.062' thick PCB. (b)RJA = 135C/W when mounted on a minimum pad of 2 oz copper. a. 60C/W when mounted on a 1 in2 pad of 2 oz copper b. 135C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDM6296 Rev.E 2 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS = 10V VGS = 4.5V VGS = 4.0V VGS = 3.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 ID, DRAIN CURRENT (A) 2.0 1.8 1.6 1.4 1.2 VGS = 10V VGS = 3.0V PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 30 VGS = 3.5V VGS = 4.0V 20 VGS = 3.0V 10 PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 1.0 VGS =4.5V 0 0.0 0.8 0 10 20 ID, DRAIN CURRENT(A) 30 40 0.2 0.4 0.6 0.8 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 25 RDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = 11.5A VGS = 10V ID = 5.8A PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX 20 15 TJ = 125oC 10 TJ = 25oC 5 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On- Resistance vs Junction Temperature 40 ID, DRAIN CURRENT (A) PULSE DURATION = 300s DUTY CYCLE = 2.0%MAX Figure 4. On-Resistance vs Gate to Source Voltage 40 IS, REVERSE DRAIN CURRENT (A) 10 1 0.1 0.01 VGS = 0V 30 VDD = 5V TJ = 125oC TJ = 25oC 20 TJ = 125oC 10 TJ = 25oC TJ = -55oC 1E-3 1E-4 0.0 0 0.5 TJ = -55oC 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 0.3 0.6 0.9 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDM6296 Rev.E 3 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 11.5A 3000 Ciss 8 VDD = 10V 6 VDD = 15V CAPACITANCE (pF) 1000 Coss 4 VDD = 20V 100 f = 1MHz VGS = 0V 2 0 0 5 10 15 Qg, GATE CHARGE(nC) 20 25 Crss 30 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage P(PK), PEAK TRANSIENT POWER (W) 100 rDS(on) LIMITED 500 TA = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 ID, DRAIN CURRENT (A) 10 100us 1ms 100 1 10ms 100ms 10 0.1 SINGLE PULSE TJ = MAX RATED RJA = 135oC/W TA = 25oC 1s 10s DC SINGLE PULSE 1 0.5 -4 10 RJA = 135 C/W -3 -2 -1 0 1 2 3 o 0.01 0.1 1 10 VDS, DRAIN to SOURCE VOLTAGE (V) 100 10 10 10 10 t, PULSE WIDTH (s) 10 10 10 Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM 0.01 SINGLE PULSE RJA = 135 C/W o t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA -1 0 1 2 3 1E-3 -4 10 10 -3 10 -2 10 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDM6296 Rev.E 4 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET FDM6296 Rev.E 5 www.fairchildsemi.com FDM6296 Single N-Channel Logic-Level PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I22 FDM6296 Rev. E 6 www.fairchildsemi.com |
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